International
Tables for
Crystallography
Volume B
Reciprocal space
Edited by U. Shmueli

International Tables for Crystallography (2010). Vol. B, ch. 2.5, p. 321   | 1 | 2 |

Figure 2.5.3.9 

M. Tanakaf
[Figure 2.5.3.9]
Figure 2.5.3.9

CBED patterns of V3Si taken with the [110] incidence. (a) Zone-axis pattern, (b) rectangular four-beam pattern with excitation of reflections H, [\bar S] and F, (c) rectangular four-beam pattern with excitation of reflections [\bar H], S and [\bar F].