International
Tables for
Crystallography
Volume C
Mathematical, physical and chemical tables
Edited by E. Prince

International Tables for Crystallography (2006). Vol. C, ch. 3.5, p. 172

Figure 3.5.1.1 

N. J. Tighe,a J. R. Fryerb and H. M. Flowerc

a42 Lema Lane, Palm Coast, FL 32137-2417, USA,bDepartment of Chemistry, University of Glasgow, Glasgow G12 8QQ, Scotland, and cDepartment of Metallurgy, Imperial College, London SW7, England

[Figure 3.5.1.1]
Figure 3.5.1.1

The two types of arrangement for final thinning by argon-ion etching. (a) The system of Paulus & Reverchon (1961[link]) with fixed ion sources, made by Alba. (b) The system of Swann with movable ion sources and an airlock for specimen viewing (drawing courtesy of Gatan, Inc.).