International
Tables for
Crystallography
Volume C
Mathematical, physical and chemical tables
Edited by E. Prince

International Tables for Crystallography (2006). Vol. C, ch. 5.4, p. 540

Figure 5.4.2.3 

A. Olsenb
[Figure 5.4.2.3]
Figure 5.4.2.3

Schematic diagram showing the indexing of the most prominent lines in the selected-area channelling pattern near the [111] zone of Si. Accelerating voltage: 25 kV.