International
Tables for
Crystallography
Volume D
Physical properties of crystals
Edited by A. Authier

International Tables for Crystallography (2006). Vol. D, ch. 1.8, p. 222

Figure 1.8.3.3 

G. D. Mahana*

aDepartment of Physics, 104 Davey Laboratory, Pennsylvania State University, University Park, Pennsylvania, USA
Correspondence e-mail: gmahan@psu.edu

[Figure 1.8.3.3]
Figure 1.8.3.3

The intrinsic mobility of electrons in silicon. Solid line: theory; points: experimental. After Rode (1972[link]).