International
Tables for
Crystallography
Volume H
Powder diffraction
Edited by C. J. Gilmore, J. A. Kaduk and H. Schenk

International Tables for Crystallography (2018). Vol. H, ch. 2.1, p. 47

Table 2.1.6 

A. Kerna*

aBruker AXS, Östliche Rheinbrückenstrasse 49, Karlsruhe 76187, Germany
Correspondence e-mail: arnt.kern@bruker-axs.de

Table 2.1.6| top | pdf |
Important detector properties at 8 keV as reported by various vendors

Only typical values are given to allow approximate comparisons. Detector properties strongly depend on individual detector designs and are subject to high development rates.

 ScintillationGas ionization (Xe/CO2 gas filling)
Wire based (0D)Wire based (1D/2D)Micro-gap (1D/2D)
DQE ∼95% ∼95% ∼80% ∼80%
Dynamic range >6 × 106 >106 >104 (1D) >8 × 107 (1D)
      >106 (2D) >109 (2D)
Maximum global count rate >2 × 106 c.p.s. >7.5 × 105 >105 (1D) >8 × 105 (1D)
      >4 × 104 c.p.s. (2D) >1.6 × 106 c.p.s. (2D)
Maximum local count rate n/a n/a >104 (1D) >9 × 105 c.p.s. mm−2 (1D, 2D)
      >104 c.p.s. mm−2 (2D)
Noise ∼0.3 c.p.s. ∼1 c.p.s. ∼1 c.p.s. (1D) <0.01 c.p.s. (1D)
      <5 × 10−4 c.p.s. mm−2 (2D) <5 × 10−4 c.p.s. mm−2 (2D)
Energy resolution ∼3500 eV (∼45%) ∼1600 eV (∼20%) ∼1600 eV (∼20%) ∼1600 eV (∼20%)
Detection mode Photon counting Photon counting Photon counting Photon counting

 Semiconductor
Si(Li)StripPixelCCDCMOS
DQE >98% >98% >98% ∼20–60% ∼75%
Dynamic range >106 >7 × 106 per strip >109 >5 × 104 >1.6 × 104
Maximum global count rate >105 c.p.s. >108  c.p.s >107 c.p.s. mm−2 n/a n/a
Maximum local count rate n/a >7 × 105 c.p.s. per strip >104 per pixel n/a n/a
Noise ∼0.1 c.p.s. ∼0.1 c.p.s. per strip ∼2.5 × 10−3 c.p.s. mm−2 <0.1 c.p.s. per pixel <0.05 c.p.s. per pixel
Energy resolution ∼200 eV (∼4%) ∼1600 eV (∼20%) >1000 eV (∼12.5%) n/a n/a
Detection mode Photon counting Photon counting Photon counting Integrating§ Integrating
∼380 eV/∼5%; Wiacek et al. (2015[link]).
>300 eV/>6% in photon-counting mode, see text.
§Photon-counting mode possible, see text.