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Detectors for electrons
International Tables for Crystallography (2006). Vol. C, ch. 7.2, pp. 639-643 [ doi:10.1107/97809553602060000605 ]
... of electrons at the detector plane. The number of electrons N arriving in a specified time interval at the detector (or ... signal is equal to where denotes the expectation value of N. This is in accord with Poisson statistics and it follows ... way as well as for specific cases by Herrmann (1984), Chapman & Morrison (1984), and Chapman, Craven & Scott (1989). Although ...
Semiconductor detectors
International Tables for Crystallography (2006). Vol. C, Section 7.2.4.3, pp. 642-643 [ doi:10.1107/97809553602060000605 ]
... commonly used semiconductor detector is a silicon photodiode whose p-n junction is reverse biased. A fast electron incident directly on ...
[more results from section 7.2.4 in volume C]
Imaging plates
International Tables for Crystallography (2006). Vol. C, Section 7.2.3.5, pp. 641-642 [ doi:10.1107/97809553602060000605 ]
... material for radiation-sensitive specimens. Ultramicroscopy, 35, 329-338. Mori, N., Katoh, T., Oikawa, T., Miyahara, J. & Harada, Y. (1986). Electron microscopy 1986, Vol. 1, edited ... pp. 29-32. Tokyo: Japanese Society of Electron Microscopy. Mori, N., Oikawa, T., Katoh, T., Miyahara, J. & Harada, Y. (1988) ...
[more results from section 7.2.3 in volume C]
Characterization of detectors
International Tables for Crystallography (2006). Vol. C, Section 7.2.2, pp. 639-640 [ doi:10.1107/97809553602060000605 ]
... of electrons at the detector plane. The number of electrons N arriving in a specified time interval at the detector (or ... signal is equal to where denotes the expectation value of N. This is in accord with Poisson statistics and it follows ... way as well as for specific cases by Herrmann (1984), Chapman & Morrison (1984), and Chapman, Craven & Scott (1989). Although ...
Introduction
International Tables for Crystallography (2006). Vol. C, Section 7.2.1, p. 639 [ doi:10.1107/97809553602060000605 ]
Introduction 7.2.1. Introduction It is convenient to divide instruments used to form electron-diffraction patterns and images into two categories. In the first, all electron beams are static in the sense that neither the beams incident on nor emergent from the specimen are varied in position or orientation during the detection ...
Conclusions
International Tables for Crystallography (2006). Vol. C, Section 7.2.5, p. 643 [ doi:10.1107/97809553602060000605 ]
Conclusions 7.2.5. Conclusions A wide variety of different means exists for detecting electrons. Many are almost perfect in that they add very little noise to that already present in the electron beam. However, no single detector meets all the requirements of different experiments and, before selecting a detector for a specific ...
International Tables for Crystallography (2006). Vol. C, ch. 7.2, pp. 639-643 [ doi:10.1107/97809553602060000605 ]
... of electrons at the detector plane. The number of electrons N arriving in a specified time interval at the detector (or ... signal is equal to where denotes the expectation value of N. This is in accord with Poisson statistics and it follows ... way as well as for specific cases by Herrmann (1984), Chapman & Morrison (1984), and Chapman, Craven & Scott (1989). Although ...
Semiconductor detectors
International Tables for Crystallography (2006). Vol. C, Section 7.2.4.3, pp. 642-643 [ doi:10.1107/97809553602060000605 ]
... commonly used semiconductor detector is a silicon photodiode whose p-n junction is reverse biased. A fast electron incident directly on ...
[more results from section 7.2.4 in volume C]
Imaging plates
International Tables for Crystallography (2006). Vol. C, Section 7.2.3.5, pp. 641-642 [ doi:10.1107/97809553602060000605 ]
... material for radiation-sensitive specimens. Ultramicroscopy, 35, 329-338. Mori, N., Katoh, T., Oikawa, T., Miyahara, J. & Harada, Y. (1986). Electron microscopy 1986, Vol. 1, edited ... pp. 29-32. Tokyo: Japanese Society of Electron Microscopy. Mori, N., Oikawa, T., Katoh, T., Miyahara, J. & Harada, Y. (1988) ...
[more results from section 7.2.3 in volume C]
Characterization of detectors
International Tables for Crystallography (2006). Vol. C, Section 7.2.2, pp. 639-640 [ doi:10.1107/97809553602060000605 ]
... of electrons at the detector plane. The number of electrons N arriving in a specified time interval at the detector (or ... signal is equal to where denotes the expectation value of N. This is in accord with Poisson statistics and it follows ... way as well as for specific cases by Herrmann (1984), Chapman & Morrison (1984), and Chapman, Craven & Scott (1989). Although ...
Introduction
International Tables for Crystallography (2006). Vol. C, Section 7.2.1, p. 639 [ doi:10.1107/97809553602060000605 ]
Introduction 7.2.1. Introduction It is convenient to divide instruments used to form electron-diffraction patterns and images into two categories. In the first, all electron beams are static in the sense that neither the beams incident on nor emergent from the specimen are varied in position or orientation during the detection ...
Conclusions
International Tables for Crystallography (2006). Vol. C, Section 7.2.5, p. 643 [ doi:10.1107/97809553602060000605 ]
Conclusions 7.2.5. Conclusions A wide variety of different means exists for detecting electrons. Many are almost perfect in that they add very little noise to that already present in the electron beam. However, no single detector meets all the requirements of different experiments and, before selecting a detector for a specific ...
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